IIGT5459M25 and IGT5459M25S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of C-Band Radar Systems. They operate over the full bandwidth of 5.4-5.9 GHz. Under 100µs, 10% duty cycle conditions, they supply 25 W of RF output power, with typically 17dB of associated gain and 48% efficiency. They operate from a 45 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.