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IGT2731L120
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGT2731L120 | 2.7 | 3.1 | 120 | 13 | 50 | 40μs, 50% | 32 | 50 | PM67A1 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
2.7
3.1
120
13
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
50
40μs, 50%
32
50
IGT2731L120 and IGT2731L120S are high power GaN-on-SiC RF power transistors that are fully matched to 50Ω at both the input and output. They supply a minimum of 120W of peak output power, with typically >13dB of gain and 50% efficiency. They operate from a 32V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.
FEATURES
GaN on SiC HEMT Technology
Output Power 120W
Fully matched to 50Ω at both input and output
100% RF Tested Under 40μs, 50% duty cycle pulse conditions
RoHS and REACH Compliant
IGT2731L120 has a bolt-down flange, IGT2731L120S has an ear-less flange for solder attach only
APPLICATION
S-band Radar Systems
EXPORT STATUS
EAR99
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