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IGT2731L120

Model
Min Frequency (GHz)
Max Frequency (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IGT2731L120
2.7
3.1
120
13
50
40ms, 50%
32
50
PM67A1
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
2.7
3.1
120
13
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
50
40ms, 50%
32
50

IGT2731L120 and IGT2731L120S are high power GaN-on-SiC RF power transistors that are fully matched to 50Ω at both the input and output. They supply a minimum of 120W of peak output power, with typically >13dB of gain and 50% efficiency. They operate from a 32V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES

GaN on SiC HEMT Technology

Output Power 120W

Fully matched to 50Ω at both input and output

100% RF Tested Under 40ms, 50% duty cycle pulse conditions

RoHS and REACH Compliant

IGT2731L120 has a bolt-down flange, IGT2731L120S has an ear-less flange for solder attach only

APPLICATION

S-band Radar Systems

EXPORT STATUS

EAR99

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