IGT2731M130

S-Band, GaN/SiC, 50-Ohm RF Power Transistor

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching (Ohm)
Package
2.7
3.1
130
16
62
300µs, 10%
50
50
PL44A1
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IGT2731M130 and IGT2731M130S are high power GaN-on-SiC RF power transistors that are fully matched to 50Ω at both the input and output. They supply a minimum of 130W of peak output power, with typically >16dB of gain and 62% efficiency. They operate from a 50 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES

GaN-on-SiC Technology

130W Output Power

Fully matched to 50Ω at both input and output

High Efficiency - 62% typical

100% RF Tested Under 300ms, 10% duty cycle pulse conditions

IGT2731M130 - bolt-down flange, IGT2731M130S - ear-less flange 

APPLICATION

S-band Radar Systems

EXPORT STATUS

EAR99