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IGT2934M250
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGT2934M250 | 2.9 | 3.4 | 250 | 14 | 55 | 150µs, 10% | 50 | 50 | PM67A1 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
2.9
3.4
250
14
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
55
150µs, 10%
50
50
IGT2934M250 is a high power GaN-on-SiC RF power transistor that is fully matched to 50Ω at both the input and output. It supplies a minimum of 250W of peak output power, with typically >14dB of gain and 55% efficiency. It operates from a 50V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.
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