IGT3135M135 and IGT3135M135S are high power GaN-on-SiC RF power transistors that are fully matched to 50W at both the input and output. They supply a minimum of 135W of peak output power, with typically >13.5dB of gain and 62% efficiency. They operate from a 46V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.