IGT3135M135

GaN Transistor for S-Band Radar Operating at 3.1-3.5 GHz

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching (Ohm)
Package
3.1
3.5
135
13.5
55
300µs, 10%
46
50
PL44A1
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IGT3135M135 and IGT3135M135S are high power GaN-on-SiC RF power transistors that are fully matched to 50W at both the input and output. They supply a minimum of 135W of peak output power, with typically >13.5dB of gain and 62% efficiency. They operate from a 46V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES

GaN-on-SiC Technology

135W Output Power

Fully matched internal impedance

100% High Power RF Tested

Class AB Operation

Negative Gate Voltage/Bias Sequencing

APPLICATION

S-band Radar Systems

EXPORT STATUS

EAR99

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