IGT5259CW25

Fully-Matched GaN Transistor, 25W CW at 5.2-5.9 GHz

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching (Ohm)
Package
5.2
5.9
25
12
45
CW
36
50
PL44C2
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IGT5259CW25 is fully matched to 50-Ohms that operates at 5.2 - 5.9 GHz of instantaneous operating frequency range, a minimum of 25W of output power and 36V drain bias. It features 12dB of gain, and 45% efficiency at CW conditions. Negative gate voltage and bias sequencing are required when utilizing this transistor. This device comes in IntegraÂ’s new package PL44C2. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.

FEATURES

GaN-on-SiC Technology

25W Output Power

Pre-matched Internal Impedance

100% High Power RF Tested

APPLICATION

C-band Radar Systems

EXPORT STATUS

EAR99