IGT5259CW50 and IGT5259CW50S are high power GaN-on-SiC RF power transistors that have been designed for C-Band Radar Systems. They operate over the full bandwidth of 5.2-5.9 GHz. Under CW conditions, they supply 50 W of RF output power, with an associated 11 dB of gain and 40% efficiency. They operate from a 28 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxysealed ceramic lid.