IGT5259CW50

C-Band, GaN/SiC, RF Power Transistor

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching (Ohm)
Package
5.2
5.9
50
13
50
CW
28
50
PL44C2
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IGT5259CW50 and IGT5259CW50S are high power GaN-on-SiC RF power transistors that have been designed for C-Band Radar Systems. They operate over the full bandwidth of 5.2-5.9 GHz. Under CW conditions, they supply 50 W of RF output power, with an associated 11 dB of gain and 40% efficiency. They operate from a 28 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxysealed ceramic lid.

FEATURES

GaN-on-SiC Technology

Output Power >50W

Fully matched to 50Ω Impedance at both Input and Output

High Efficiency - up to 50%

100% RF Tested

IGT5259CW50 - bolt-down flange, IGT5259CW50S - earless flange

APPLICATION

C-band Radar Systems

EXPORT STATUS

3A001

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