IGT5259CW50
C-Band, GaN/SiC, RF Power Transistor
Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching (Ohm) | Package |
|---|---|---|---|---|---|---|---|---|
5.2 | 5.9 | 50 | 13 | 50 | CW | 28 | 50 | PL44C2 |
IGT5259CW50 and IGT5259CW50S are high power GaN-on-SiC RF power transistors that have been designed for C-Band Radar Systems. They operate over the full bandwidth of 5.2-5.9 GHz. Under CW conditions, they supply 50 W of RF output power, with an associated 11 dB of gain and 40% efficiency. They operate from a 28 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxysealed ceramic lid.
FEATURES
GaN-on-SiC Technology
Output Power >50W
Fully matched to 50Ω Impedance at both Input and Output
High Efficiency - up to 50%
100% RF Tested
IGT5259CW50 - bolt-down flange, IGT5259CW50S - earless flange
APPLICATION
C-band Radar Systems
EXPORT STATUS
3A001
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