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IGT5259CW50
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGT5259CW50 | 5.2 | 5.9 | 50 | 13 | 50 | CW | 28 | 50 | PL44C2 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
5.2
5.9
50
13
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
50
CW
28
50
IGT5259CW50 and IGT5259CW50S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of C-Band Radar Systems. They operate over the full bandwidth of5.2-5.9 GHz. Under CW conditions, they supply 50 W of RF output power, with an associated 11 dB of gain and 40% efficiency. They operate from a 28 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxys-ealed ceramic lid.
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