IGT5459M25

GaN Transistor for C-Band Radar Operating at 5.4-5.9 GHz

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching (Ohm)
Package
5.4
5.9
25
15
43
50µs, 10%
45
50
PL44A1
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IGT5459M25 is a high power GaN transistor, best suited for C-band radar applications. Specified for use under Class AB operation, this transistor operates at 5.4-5.9 GHz of operating frequency, a minimum of 25W of peak output power, 50V and 10% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.

FEATURES

GaN-on-SiC Technology

25W Output Power

Fully-matched internal impedance

100% High Power RF Tested

Class AB Operation

Negative Gate Voltage/Bias Sequencing

APPLICATION

C-band Radar Systems

EXPORT STATUS

EAR99

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