IGT5459M25
GaN Transistor for C-Band Radar Operating at 5.4-5.9 GHz
Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching (Ohm) | Package |
|---|---|---|---|---|---|---|---|---|
5.4 | 5.9 | 25 | 15 | 43 | 50µs, 10% | 45 | 50 | PL44A1 |
IGT5459M25 is a high power GaN transistor, best suited for C-band radar applications. Specified for use under Class AB operation, this transistor operates at 5.4-5.9 GHz of operating frequency, a minimum of 25W of peak output power, 50V and 10% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
FEATURES
GaN-on-SiC Technology
25W Output Power
Fully-matched internal impedance
100% High Power RF Tested
Class AB Operation
Negative Gate Voltage/Bias Sequencing
APPLICATION
C-band Radar Systems
EXPORT STATUS
EAR99
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