IGT8292M50

X-Band Radar Transistor Operating at 8.2-9.2 GHz

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching (Ohm)
Package
8.2
9.2
50
12
45
100µs, 10%
50
50
PFC77B1
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IGT8292M50 is a high power GaN transistor, best suited for X-band radar applications. Specified for use under Class AB operating, this transistor operates at 8.2-9.2 GHz of operating frequency, a minimum of 50W of peak output power, 50V and 10% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.

FEATURES

GaN-on-SiC Technology

50W Output Power

Fully-matched internal impedance

100% High Power RF Tested

Class AB Operation

Negative Gate Voltage/Bias Sequencing

APPLICATION

X-Band Radar

EXPORT STATUS

3A001

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