IGT9010M50
X-Band, GaN/SiC, RF Power Transistor
Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching (Ohm) | Package |
|---|---|---|---|---|---|---|---|---|
9 | 10 | 50 | 12 | 43 | 100µs Pulse Length, 10% Duty Cycle | 50 | 50 | PFC77B1 |
IGT9010M50 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of X-Band Radar Systems. It operates over the full bandwidth of 9.0 - 10.0 GHz. Under 200µs, 10% duty cycle pulse conditions, it supplies 50 W of peak output power, with an associated 10 dB of gain and 38% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.
FEATURES
GaN-on-SiC Technology
Output Power >50W
Fully matched to 50Ω Impedance at both Input and Output
High Efficiency - up to 43%
100% RF Tested
RoHS and REACH Compliant
APPLICATION
X-Band Radar
EXPORT STATUS
3A001
Download CAD File
