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IGT9010M50

X-Band, GaN/SiC, RF Power Transistor

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching (Ohm)
Package
9
10
50
12
43
100µs Pulse Length, 10% Duty Cycle
50
50
PFC77B1
ign0160um12.jpeg

IGT9010M50 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of X-Band Radar Systems. It operates over the full bandwidth of 9.0 - 10.0 GHz. Under 200µs, 10% duty cycle pulse conditions, it supplies 50 W of peak output power, with an associated 10 dB of gain and 38% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES

GaN-on-SiC Technology

Output Power >50W

Fully matched to 50Ω Impedance at both Input and Output

High Efficiency - up to 43%

100% RF Tested

RoHS and REACH Compliant

APPLICATION

X-Band Radar

EXPORT STATUS

3A001

Download CAD File
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