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IGT9010M50 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of X-Band Radar Systems. It operates over the full bandwidth of 9.0 - 10.0 GHz. Under 200µs, 10% duty cycle pulse conditions, it supplies 50 W of peak output power, with an associated 10 dB of gain and 38% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.
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