ILT2731M130

50-Ohm Transistor for S-Band Radar Operating at 2.7-3.1 GHz

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching (Ohm)
Package
2.7
3.1
130
12
43
300µs, 10%
32
50
P64H2
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ILT2731M130 is a high power LDMOS transistor, best suited for S-band radar applications. Specified for use under Class A, B and AB operation, this transistor operates at 2.7 - 3.1 GHz of operating frequency, a minimum of 130W of peak output power, and 10% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.

FEATURES

Si-LDMOS FET Technology

130W Output Power

Fully matched internal impedance

100% High Power RF Tested

Class AB Operation

Negative Gate Voltage/Bias Sequencing

APPLICATION

S-band Radar Systems

EXPORT STATUS

EAR99

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