Microwave Journal editors Pat Hindle and Gary Lerude talk with Integra Technologies VP of Sales & Marketing, Tom Kole, and Teledyne e2v VP of Business Development, Mont Taylor, about 100V GaN transistor technology and its applications.

Teledyne e2v HiRel Electronics, a leading provider of high reliability semiconductor solutions, today announced that it will be offering High Reliability qualified versions of California-based Integra Technologies, Inc. (Integra) new 100V Gallium Nitride on Silicon Carbide (GaN/SiC) power transistors.

Integra’s first 100V RF GaN product, the IGN1011S3600, delivers breakthrough output power performance of 3.6 kiloWatts at 70% efficiency for next generation avionic systems.

Integra Technologies VP of Sales and Marketing talks with Microwave Journal® Editors Pat Hindle and Gary Lerude about the high power transistor market and their new innovative modular solution that offers plug and play pallet solutions.

Integra offers a high power pulsed avionics L-band module and a high efficiency, low input/output VSWR module. Designed for pulsed L-Band Radar applications, the IGT5259L50 high-power GaN-on-SiC HEMT transistor is fully-matched to 50-ohms and supplies 50 W of peak pulsed output power.

MPD: If you sell to the defense sector, what do you believe are the major challenges for RF and microwave technology in serving DoD's needs?

Integra announces a fully-matched, GaN/SiC transistor, offering 50W at 5-6 GHz. Designed for pulsed C-Band Radar applications, the IGT5259L50 high-power GaN-on-SiC HEMT transistor is fully-matched to 50-ohms and supplies 50 W of peak pulsed output power.

Integra Technologies offers a pair of 135 W and a 130 W gallium nitride on silicon carbide (GaN/SiC) transistors for S-band radar applications. IGT2731M130 operates at the instantaneous operating frequency range of 2.7 to 3.1 GHz and IGT3135M135 [...]

IGT5259CW25 is a fully matched to 50-Ohms RF Power Transistor that operates at 5.2 - 5.9 GHz of instantaneous operating frequency range with a minimum of 25 W of output power and 36V drain bias. It features 12 dB of gain, and 48% efficiency [...]

Integra Technologies announced today it has been awarded a two-year contract by the U.S. Air Force to accelerate technology and manufacturing readiness of its patented, Thermally-Enhanced GaN/SiC technology. Integra's GaN/SiC technology is ideal for high efficiency, solid-state RF power applications including high power radar systems requiring improved performance, increased range and reduced operating costs.

Integra's new 2019 RF and Microwave Power Transistors and Power Amplifier Modules product selection guide provides a clean, captivating design, detailing their extensive line of RF power devices for use in radar system high power amplifier (HPA) designs.

We are excited to attend this years European Microwave Week (EuMW), September 25th to 27th in Madrid, Spain. At EuMW, Integra will showcase our newly released high power GaN-on-SiC transistor IGT5259CW25. Offering frequency coverage of 5.2 to 5.9 GHz, [...]

Our VP of Sales and Marketing, Thomas Kole, interviewed with everything RF to discuss Integra's history, high power RF devices, expert team of engineers, what differentiates Integra in this industry and Integra's 5 year plan. We are a company [...]

Integra Technologies lead engineer, Apet Barsegyan interviewed with RF Globalnet at the International Microwave Symposium, June 2018 in Philly to discuss solutions for the challenges in upgrading current TWTs in high-power radar & pulsed applications to the newest solid-state GaN HEMT tech.

Integra is excited to be showcasing several new devices at this year's International Microwave Symposium in Philadelphia, PA. They will be at Booth #815.

We are excited to announce the launch of our new brand identity and redesigned website. Integra has taken the opportunity of IMS 2018 to announce our new brand identity and website, both created by RF industry experts, Strand Marketing. "We [...]

Integra has released their new tech brief "Zero-in on the Best RF Transistor Technology for Your Radar's High Power Amplifier Designs." The best solid-state, high power amplifiers (HPAs), especially those used in critical defense, aerospace, [...]

We are happy to offer Gallium Nitride on Silicon Carbide (GaN-on-SiC) HEMT transistor evaluation kits to designers evaluating this technology for their high power amplifier designs. Each kit is customized to include a designer's transistor [...]

Integra offers a IFF avionics transistor offering 120W peak output power using GaN/SiC technology. Designed for IFF avionic applications, IGN1011L120 is a high power GaN transistor, specified for use under Class AB operation. This transistor operates [...]

We have published an application note on to how to best utilize the fully automatic and fail-safe bias circuit feature in our line of high power GaN transistors that only requires a single positive voltage power supply. As GaN HEMT transistors are [...]

We are excited to release a new RF power amplifier module/pallet designed to solve various size, weight, power, and cost challenges (SWaP-C) in high-performance L-band avionic systems. IGNP1011L2400 is a high power GaN-on-SiC RF power [...]

We are pleased to announce the formal launch of our new line of over a dozen standardized RF Power Modules (aka Pallets). Differentiating these integrated standard modules from custom or build-to-print, PCB amplifier assemblies, or "pallets", [...]

We are excited to offer a white paper describing the rationale for utilizing high voltage GaN HEMT technology in wideband radar and avionic systems. The signal discussed is a pulse of 100 ?s width and 10% duty cycle. This paper explores the [...]

We are excited to offer IGN1011L1200, a GaN power transistor, best suited for L-band avionics. IGN1011L1200 is a GaN-on-SiC HEMT technology, offering 1.03 - 1.09 GHz of operating frequency, a minimum of 1200W of peak pulse power, 50V supply voltage [...]

Microwave Journal interviews Integra's CEO, Suja Ramnath on her plans for innovation, growth and what's setting Integra apart from other RF power companies. She starts with a snapshot on how we began: "Integra was launched in [...]

Several active device semiconductor technologies are available today to amplify pulsed and continuous-wave (CW) signals across narrow or wide bandwidths from HF/VHF/UHF to L-, S-, C-, and X-band frequencies and beyond. But while more recent power-transistor [...]

We proudly present a white paper written by Integra's Daniel Koyama, Apet Barsegyan, and John Walker, describing the implications of using kW-level GaN transistors in radar and avionic systems. This paper examines the effect of using normal [...]