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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
2.7
3.1
80
13.5
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
60
100µs, 10%
40
Input & Output
IGN2731M80
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN2731M80 | 2.7 | 3.1 | 80 | 13.5 | 60 | 100µs, 10% | 40 | Input & Output | PL32A1 |
IGN2731M80 and IGN2731M80S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of modern radar systems. They supply a minimum of 80W of peak output power, with typically 13.5 dB of gain and 60% efficiency. They operate from a 40 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.
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