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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
2.9
3.2
75
14
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
55
100µs, 10%
45
Input & Output
IGN2932M75
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN2932M75 | 2.9 | 3.2 | 75 | 14 | 55 | 100µs, 10% | 45 | Input & Output | PL32A1 |
IGN2932M75 and IGN2932M75S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of modern radar systems. They supply a minimum of 75W of peak output power, with typically 14dB of gain and 55% efficiency. They operate from a 45 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.
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