IGN0160UM12 is a high power GaN-on-SiC RF power transistor without any internal impedance matching that has been designed for general purpose CW and pulsed applications up to 6 GHz. It supplies a minimum of 12W of output power, with typically >17dB of gain and 55% efficiency at 3 GHz. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.