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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
0.1
6
12
17
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
55
CW
50
None
IGN0160UM12
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN0160UM12 | 0.1 | 6 | 12 | 17 | 55 | CW | 50 | None | PL21A1 |
IGN0160UM12 is a high power GaN-on-SiC RF power transistor without any internal impedance matching that has been designed for general purpose CW and pulsed applications up to 6 GHz. It supplies a minimum of 12W of output power, with typically >17dB of gain and 55% efficiency at 3 GHz. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.
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