IGN0160UM12

High Power Broadband GaN Transistor

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
0.1
6
12
17
55
CW
50
None
PL21A1
ign0160um12.jpeg

IGN0160UM12 is a high power GaN-on-SiC RF power transistor without any internal impedance matching that has been designed for general purpose CW and pulsed applications up to 6 GHz. It supplies a minimum of 12W of output power, with typically >17dB of gain and 55% efficiency at 3 GHz. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES

GaN on SiC HEMT Technology

12W Output Power

Unmatched

100% High Power RF Tested

Class AB Operation

Negative Gate Voltage/Bias Sequencing

APPLICATION

Broadband

EXPORT STATUS

EAR99