IGN0160UM12

High Power Broadband GaN Transistor

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
0.1
6
12
17
55
CW
50
None
PL21A1
ign0160um12.jpeg

IGN0160UM12 is a high power GaN transistor, designed for Broadband applications. This transistor operates over the 100MHz - 6GHz instantaneous frequency band. It supplies a minimum of 12W of output power with 17dB gain. Specified operation is Class AB. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.

FEATURES

GaN on SiC HEMT Technology

12W Output Power

Unmatched

100% High Power RF Tested

Class AB Operation

Negative Gate Voltage/Bias Sequencing

APPLICATION

Broadband

EXPORT STATUS

EAR99