IGN0450L1250

High Power L-Band Avionics Transistor Offers 1250W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
0.43
0.45
1250
18.5
75
16ms, 25%
50
Input
PL124A1
ign0160um12.jpeg

IGN0450L1250 is a high power GaN-on-SiC push-pull RF power transistor that has been designed to suit the unique needs of P band radar systems. It operates over the full 430-450 MHz frequency range. Under 16ms, 25% duty cycle pulse conditions, it supplies a minimum of 1250 W of peak output power, with typically 18.5 dB of gain and 75% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with thermal enhancement and uses an epoxy-sealed ceramic lid.

FEATURES

GaN on SiC HEMT Technology

Output Power >1250W

Pre-matched Input Impedance

Exceptionally High Efficiency - up to 80%

100% RF Tested Under 16ms, 25% duty cycle pulse conditions

RoHS and REACH Compliant

APPLICATION

P-Band Radar Systems

EXPORT STATUS

EAR99