IGN0450M1500

P-Band, GaN/SiC, RF Power Transistor

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
0.43
0.45
1500
20
80
250µs, 1%
50
Input
PL124A1
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IGN0450M1500 is a high power GaN-on-SiC push-pull RF power transistor that has been designed to suit the unique needs of P band radar systems. It operates over the full 430-450 MHz frequency range. Under 250ms, 1% duty cycle pulse conditions, it supplies a minimum of 1500 W of peak output power, with typically 20 dB of gain and 80% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with thermal enhancement and uses an epoxy-sealed ceramic lid.

FEATURES

GaN on SiC HEMT Technology

Output Power > 1500 W

Pre-matched Input Impedance

Exceptionally High Efficiency - up to 80%

100% RF Tested Under 250µs, 1% duty cycle pulse conditions

RoHS and REACH Compliant

APPLICATION

P-Band Radar Systems

EXPORT STATUS

EAR99