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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
0.43
0.45
1500
20
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
80
250µs, 1%
50
Input
IGN0450M1500
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN0450M1500 | 0.43 | 0.45 | 1500 | 20 | 80 | 250µs, 1% | 50 | Input | PL124A1 |
IGN0450M1500 is a high power GaN-on-SiC push-pull RF power transistor that has been designed to suit the unique needs of P band radar systems. It operates over the full 430-450 MHz frequency range. Under 250µs, 1% duty cycle pulse conditions, it supplies a minimum of 1500 W of peak output power, with typically 20 dB of gain and 80% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with thermal enhancement and uses an epoxy-sealed ceramic lid.
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