IGN0450M1500 is a high power GaN-on-SiC push-pull RF power transistor that has been designed to suit the unique needs of P band radar systems. It operates over the full 430-450 MHz frequency range. Under 250ms, 1% duty cycle pulse conditions, it supplies a minimum of 1500 W of peak output power, with typically 20 dB of gain and 80% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with thermal enhancement and uses an epoxy-sealed ceramic lid.