IGN0450M250 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of P band radar systems. It operates over the full 420-450 MHz frequency range. Under 100ms, 10% duty cycle pulse conditions, it supplies a minimum of 250 W of peak output power, with typically >24 dB of gain and 75% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxysealed ceramic lid