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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
0.42
0.45
250
24
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
75
100µs, 10%
50
Input

IGN0450M250

Model
Min Frequency (GHz)
Max Frequency (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IGN0450M250
0.42
0.45
250
24
75
100µs, 10%
50
Input
PL44C1

IGN0450M250 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of P band radar systems. It operates over the full 420-450 MHz frequency range. Under 100ms, 10% duty cycle pulse conditions, it supplies a minimum of 250 W of peak output power, with typically >24 dB of gain and 75% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxysealed ceramic lid

FEATURES

GaN on SiC HEMT Technology

Output Power >250W

Pre-matched Input Impedance

Exceptionally High Efficiency - up to 80%

100% RF Tested Under 100µs, 10% duty cycle pulse conditions

Full Non-Linear Electrothermal Model Available

APPLICATION

P-Band Radar Systems

EXPORT STATUS

EAR99

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