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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
0.42
0.45
250
24
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
75
100µs, 10%
50
Input
IGN0450M250
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN0450M250 | 0.42 | 0.45 | 250 | 24 | 75 | 100µs, 10% | 50 | Input | PL44C1 |
IGN0450M250 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of P band radar systems. It operates over the full 420-450 MHz frequency range. Under 100µs, 10% duty cycle pulse conditions, it supplies a minimum of 250 W of peak output power, with typically >24 dB of gain and 75% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxysealed ceramic lid
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