IGN0450M850

S-Band, GaN/SiC, RF Power Transistor

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
0.4
0.45
850
20
75
300µs, 10%
50
Input
PL84A1
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IGN0450M850 and IGN0450M850S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of P band radar systems. They operate over the full 400-450 MHz frequency range. Under 300ms, 10% duty cycle pulse conditions, they supply a minimum of 850 W of peak output power, with typically >20 dB of gain and 75% efficiency. They operate from a 50 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES

GaN on SiC HEMT Technology

Output Power > 850W

Pre-matched Input Impedance

Exceptionally High Efficiency - up to 78%

100% RF Tested Under 300µs, 10% duty cycle pulse conditions

IGN0450M850 - bolt-down flange, IGN0450M850S - earless flange

APPLICATION

S-Band Radar Systems

EXPORT STATUS

EAR99

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