top of page
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
0.96
1.215
10
18
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
40
CW
28
Input
IGN0912CW10
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN0912CW10 | 0.96 | 1.215 | 10 | 18 | 40 | CW | 28 | Input | PL32A2 |
IGN0912CW10 is a high power GaN transistor best suited for L-band radar applications. Specified for use under Class AB operation, this transistor offers 0.96-1.215 GHz of operating frequency, minimum of 10W of peak pulse power and 28V. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
bottom of page