IGN0912CW10
High Power Radar Transistor Operating at 0.96-1.215 GHz
Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|
0.96 | 1.215 | 10 | 18 | 40 | CW | 28 | Input | PL32A2 |
IGN0912CW10 is a high power GaN transistor best suited for L-band radar applications. Specified for use under Class AB operation, this transistor offers 0.96-1.215 GHz of operating frequency, minimum of 10W of peak pulse power and 28V. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
FEATURES
GaN on SiC HEMT Technology
10W Output Power
Class AB Operation
Pre-matched Internal Impedance
100% High Power RF Tested
Negative Gate Voltage/Bias Sequencing
APPLICATION
L-Band Avionics
EXPORT STATUS
EAR99
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