top of page

IGN0912CW150 is a high power GaN transistor best suited for L-band avionic applications. Specified for use under Class AB operation, 0.96-1.215 GHz of operating frequency, minimum of 150W of peak pulse power, and 28V. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
bottom of page