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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
0.96
1.215
150
14
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
65
CW
28
Input & Output
IGN0912CW150
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN0912CW150 | 0.96 | 1.215 | 150 | 14 | 65 | CW | 28 | Input & Output | PL95A1 |
IGN0912CW150 is a high power GaN transistor best suited for L-band avionic applications. Specified for use under Class AB operation, 0.96-1.215 GHz of operating frequency, minimum of 150W of peak pulse power, and 28V. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
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