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IGN0912CW300

High Power L-Band Transistor Operates at 0.96-1.215 GHz

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
0.96
1.215
300
15
70
CW
36
Input & Output
PL95A1
ign0160um12.jpeg

IGN0912CW300 is a high power GaN transistor best suited for L-band avionic applications. Specified for use under Class AB operation, this transistor offers 0.96-1.215 GHz of operating frequency, minimum of 300W of peak pulse power, and 36V. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.

FEATURES

GaN on SiC HEMT Technology

300W Output Power

Class AB Operation

Pre-matched Internal Impedance

100% High Power RF Tested

Negative Gate Voltage/Bias Sequencing

APPLICATION

L-Band Avionics

EXPORT STATUS

EAR99

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