IGN0912CW300
High Power L-Band Transistor Operates at 0.96-1.215 GHz
Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|
0.96 | 1.215 | 300 | 15 | 70 | CW | 36 | Input & Output | PL95A1 |
IGN0912CW300 is a high power GaN transistor best suited for L-band avionic applications. Specified for use under Class AB operation, this transistor offers 0.96-1.215 GHz of operating frequency, minimum of 300W of peak pulse power, and 36V. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
