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IGN0912L250A
High Power Transistor Operating at 0.96-1.22 GHz
Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|
0.96 | 1.215 | 250 | 17.5 | 65 | 444x (7µs On, 6µs Off), 22.7% | 50 | Input & Output | PL44C1 |
IGN0912L250A is a high power GaN transistor best suited for L-band avionic applications. Specified for use under Class AB operation, this transistor offers 0.96-1.22 GHz of operating frequency, minimum of 250W of peak pulse power, 50V and 22.7% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
FEATURES
GaN on SiC HEMT Technology
250W Output Power
Class AB Operation
Pre-matched Internal Impedance
100% High Power RF Tested
Negative Gate Voltage/Bias Sequencing
APPLICATION
L-Band Avionics
EXPORT STATUS
EAR99
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