top of page
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
0.96
1.22
250
18
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
60
444x (7µs On, 6µs Off), 22.7%
50
Input
IGN0912L250M
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN0912L250M | 0.96 | 1.22 | 250 | 18 | 60 | 444x (7µs On, 6µs Off), 22.7% | 50 | Input | PL44C1 |
IGN0912L250M is a high power GaN transistor best suited for L-band avionic applications. Specified for use under Class AB operation, this transistor offers 0.96-1.22 GHz of operating frequency, minimum of 250W of peak pulse power, 50V and 20% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
bottom of page