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IGN0912L250M is a high power GaN transistor best suited for L-band avionic applications. Specified for use under Class AB operation, this transistor offers 0.96-1.22 GHz of operating frequency, minimum of 250W of peak pulse power, 50V and 20% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
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