IGN0912LM500

High Power L-Band Avionics Transistor Offers 500W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
0.96
1.215
500
18
63
48x (32µs On, 18µs Off), 6.4%
50
Input
PL44C1
ign0160um12.jpeg

IGN0912LM500 and IGN0912LM500A are high power GaN-on-SiC RF power transistors that have been designed to suit the needs of IFF/SSR avionics systems, military tactical data links, and TACAN/DME systems. They operate over the full instantaneous bandwidth of 960-1220MHz. IGN0912LM500 under ELM Mode S [48x (32?s on, 18?s off), 6.4% Long Term Duty Cycle] pulse conditions and IGN0912LM500A under Link 16 [444x (7?s on, 6?s off), 22.7% Long Term Duty Cycle] pulse conditions both supply a minimum of 500 W of peak output power, with typically >18 dB of gain and 65% efficiency. They operate from a 50 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES

GaN on SiC HEMT Technology

Output Power >500 W

Pre-matched Input Impedance

High Efficiency - 63% typical

100% RF Tested Under Mode S ELM (IGN0912LM500) or Link 16 (IGN0912LM500A) pulse conditions ALSO FEATURE 7

RoHS and REACH Compliant

APPLICATION

TACAN/DME Systems

EXPORT STATUS

EAR99