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IGN1011L1000R2 is a high power GaN transistor best suited for L-band avionic applications. Specified for use under Class AB operation, this transistor offers 1.03 - 1.09 GHz of operating frequency, minimum of 1000W of peak pulse power, 50V and 6.4% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
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