IGN1011L120
L-Band Avionics Transistor Operating at 1.03-1.09 GHz
Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|
1.03 | 1.09 | 120 | 20 | 70 | 48x (32µs On, 18µs Off), 6.4% | 50 | Input | PL44C1 |
IGN1011L120 and IGN1011L120S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of IFF/SSR avionics systems. They operate at both 1030 and 1090 MHz. Under ELM Mode S [48x (32μs on, 18μs off), 6.4% Long Term Duty Cycle] pulse conditions, they supply a minimum of 120 W of peak output power, with typically >20 dB of gain and 70% efficiency. They operate from a 50 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy- sealed ceramic lid.
