IGN1011L120

L-Band Avionics Transistor Operating at 1.03-1.09 GHz

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
1.03
1.09
120
20
70
48x (32µs On, 18µs Off), 6.4%
50
Input
PL44C1
ign0160um12.jpeg

IGN1011L120 and IGN1011L120S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of IFF/SSR avionics systems. They operate at both 1030 and 1090 MHz. Under ELM Mode S [48x (32μs on, 18μs off), 6.4% Long Term Duty Cycle] pulse conditions, they supply a minimum of 120 W of peak output power, with typically >20 dB of gain and 70% efficiency. They operate from a 50 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy- sealed ceramic lid.

FEATURES

GaN on SiC HEMT Technology

120W Output Power

Class AB Operation

Pre-matched Internal Impedance

100% High Power RF Tested

Negative Gate Voltage/Bias Sequencing

APPLICATION

L-Band Avionics

EXPORT STATUS

EAR99