IGN1011L1200

L-Band Avionics Transistor Offering 1200W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
1.03
1.09
1200
17
85
48x (32µs On, 18µs Off), 6.4%
50
Input
PL84A1
ign0160um12.jpeg

IGN1011L1200 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of IFF/SSR avionics systems. It operates at both 1030 and 1090 MHz. Under ELM Mode S [48x (32µs On, 18µs Off), 6.4% Long Term Duty Cycle] pulse conditions, it supplies a minimum of 1200 W of peak output power, with typically >17 dB of gain and 85% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES

GaN on SiC HEMT Technology

Output Power >1200 W

Pre-matched Input Impedance

Exceptionally High Efficiency - up to 85%

100% RF Tested Under Mode S ELM pulse conditions

RoHS and REACH Compliant

APPLICATION

Also suitable for Standard Mode S applications

EXPORT STATUS

EAR99