IGN1011L20-PB

High Power L-Band Avionics Transistor Offers 20W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
1.03
1.09
20
18
50
48x (32µs on, 18µs off), 6.4
50
Input
PL32A2
ign0160um12.jpeg

IGN1011L20-PB and IGN1011L20-SP are high power GaN-on-SiC RF power transistors that have been designed to suit the needs of IFF/SSR avionics systems. They operate over the full instantaneous bandwidth of 1030- 1090MHz. IGN1011L20-PB under ELM Mode S [48x (32µs on, 18µs off), 6.4% Long Term Duty Cycle] pulse conditions and IGN1011L20-SP under standard pulse conditions [128µs, 2% Duty Cycle] both supply a minimum of 20 W of peak output power, with typically >20 dB of gain and 55% efficiency. They operate from a 50 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES

GaN on SiC HEMT Technology

Output Power >20 W

Pre-matched Input Impedance

High Efficiency - 55% typical

100% RF Tested Under Mode S ELM (IGN1011L20-PB) or standard pulse conditions (IGN1011L20-SP)

RoHS and REACH Compliant

APPLICATION

L-Band Avionics IFF & SSR Systems - Suitable for both uplink and downlink (Transponder)

EXPORT STATUS

EAR99

Download CAD File