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IGN1011M15

High Power L-Band Radar Transistor Operates at 1.03-1.09 GHz

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
1.03
1.09
15
19.5
55
128µs, 2%
50
Input
PL32A2
ign0160um12.jpeg

IGN1011M15 is a high power GaN transistor best suited for L-band radar applications. Specified for use under Class AB operation, this transistor offers 1.03 - 1.09 GHz of operating frequency, minimum of 15W of peak pulse power, 50V and 2% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.

FEATURES

GaN on SiC HEMT Technology

15W Output Power

Class AB Operation

Pre-matched Internal Impedance

100% High Power RF Tested

Negative Gate Voltage/Bias Sequencing

APPLICATION

L-Band Avionics

EXPORT STATUS

EAR99

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