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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.03
1.09
15
19.5
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
55
128µs, 2%
50
Input
IGN1011M15
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN1011M15 | 1.03 | 1.09 | 15 | 19.5 | 55 | 128µs, 2% | 50 | Input | PL32A2 |
IGN1011M15 is a high power GaN transistor best suited for L-band radar applications. Specified for use under Class AB operation, this transistor offers 1.03 - 1.09 GHz of operating frequency, minimum of 15W of peak pulse power, 50V and 2% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
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