IGN1011M600

High Power L-Band Avionics Transistor Offers 600W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
1.03
1.09
700
17
65
128µs, 2%
50
Input
PL64A1
ign0160um12.jpeg

IGN1011M600 and IGN1011M600S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of IFF/SSR avionics systems. They operate at both 1030 and 1090 MHz. Under 128μs pulse length, 2% duty cycle pulse conditions they supply a minimum of 600 W of peak output power, with typically >17 dB of gain and 65% efficiency. They operate from a 50 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metalbased package with an epoxy-sealed ceramic lid.

FEATURES

GaN on SiC HEMT Technology

Output Power >700 W

Pre-matched Input Impedance

High Efficiency - up to 65% during the RF pulse

100% RF Tested

RoHS and REACH Compliant

APPLICATION

L-Band Avionics

EXPORT STATUS

EAR99