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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.03
1.09
1000
19.2
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
60
32μs, 4%
50
Input

IGN1011S1000

Model
Min Frequency (GHz)
Max Frequency (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IGN1011S1000
1.03
1.09
1000
19.2
60
32μs, 4%
50
Input
PL64B1

IGN1011S1000 and IGN1011S1000S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of IFF and avionic systems. They operate at both 1030 and 1090 MHz. Under 32μs, 4% duty cycle pulse conditions, they supply a minimum of 1000 W of peak output power. They operate from a 50 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES

GaN on SiC HEMT Technology

Output Power >1000 W

Pre-matched Input Impedance

High Efficiency - up to 68%

100% RF Tested Under 32μs, 4% duty cycle pulsed

RoHS and REACH Compliant

APPLICATION

IFF and SSR Avionic Systems

EXPORT STATUS

EAR99

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