IGN1011S1250

L-Band, GaN/SiC, RF Power Transistor

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
1.03
1.09
1250
19
60
32μs, 40%
50
Input
PL84A1
ign0160um12.jpeg

IGN1011S1250 and IGN1011S1250S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of IFF/SSR avionics systems. They operate at both 1030 and 1090 MHz. Under 32μs pulse length, 40% duty cycle pulse conditions, they supply a minimum of 1250 W of peak output power, with typically >18.5dB of associated gain. They operate from a 50 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES

GaN on SiC HEMT Technology

Output Power >1250 W

Pre-matched Input Impedance

High Efficiency - up to 65%

100% RF Tested under 32μs, 40% duty cycle pulse conditions

RoHS and REACH Compliant

APPLICATION

L-band Avionics IFF & SSR Systems and Suitable for uplink and downlink

EXPORT STATUS

EAR99