IGN1011S250

L-Band, GaN/SiC, RF Power Transistor

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
1.03
1.09
250
18.5
65
32μs, 4%
50
Input
PL44C1
ign0160um12.jpeg

IGN1011S250 and IGN1011S250S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of IFF/SSR avionics systems. They operate at both 1030 and 1090 MHz. Under 32μs pulse length, 4% duty cycle pulse conditions, they supply a minimum of 250 W of peak output power, with typically >18.5dB of associated gain. They operate from a 50 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES

GaN on SiC HEMT Technology

Output Power >250 W

Pre-matched Input Impedance

Miniaturized Circuit Design

100% RF Tested

RoHS and REACH Compliant

APPLICATION

L-band Avionics IFF & SSR Systems and Suitable for uplink and downlink

EXPORT STATUS

EAR99