IGN1011S350

L-Band, GaN/SiC, RF Power Transistor

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
1.03
1.09
350
18.5
63
32μs, 4%
50
Input
PL44C1
ign0160um12.jpeg

IGN1011S350 and IGN1011S350S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of IFF and avionic systems. They operate at both 1030 and 1090 MHz. Under 32ms, 4% duty cycle pulse conditions, they supply a minimum of 350 W of peak output power. They operate from a 50 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES

GaN on SiC HEMT Technology

Output Power >350 W

Pre-matched Input Impedance

High Efficiency - up to 68%

100% RF Tested Under 32 ms, 4% duty cycle pulsed

RoHS and REACH Compliant

APPLICATION

IFF and SSR Avionic Systems

EXPORT STATUS

EAR99