IGN1011S350 and IGN1011S350S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of IFF and avionic systems. They operate at both 1030 and 1090 MHz. Under 32ms, 4% duty cycle pulse conditions, they supply a minimum of 350 W of peak output power. They operate from a 50 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.