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IGN1012S1000 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of L-band radar systems. It supplies a minimum of 1000 W of peak output power, with typically >16 dB of gain and 65% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.
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