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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.025
1.15
1000
16
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
65
32µs, 2%
50
Input
IGN1012S1000
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN1012S1000 | 1.025 | 1.15 | 1000 | 16 | 65 | 32µs, 2% | 50 | Input | PL84A1 |
IGN1012S1000 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of L-band radar systems. It supplies a minimum of 1000 W of peak output power, with typically >16 dB of gain and 65% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.
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