IGN1012S1000

High Power L-Band Avionics Transistor Offers 1000W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
1.025
1.15
1000
15.5
65
32µs, 2%
50
Input
PL84A1
ign0160um12.jpeg

IGN1012S1000 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of L-band radar systems. It supplies a minimum of 1000 W of peak output power, with typically >15.5 dB of gain and 65% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES

GaN on SiC HEMT Technology

1000W Output Power

Class AB Operation

Pre-matched Internal Impedance

100% High Power RF Tested

Negative Gate Voltage/Bias Sequencing

APPLICATION

L-Band Avionics

EXPORT STATUS

EAR99