top of page
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.025
1.15
1200
17.5
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
65
32µs, 4%
50
Input
IGN1012S1200
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN1012S1200 | 1.025 | 1.15 | 1200 | 17.5 | 65 | 32µs, 4% | 50 | Input | PL95A1 |
IGN1012S1200 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of TACAN, DME and IFF/SSR avionics systems. Under 32µs, 4% duty cycle pulse conditions, it supplies 1200 W of peak output power, with typically 17.5dB of associated gain and 65% efficiency. It operates from a 50V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.
bottom of page