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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.025
1.15
2000
18
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
62
32µs, 4%
65
Input
IGN1012S2000
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN1012S2000 | 1.025 | 1.15 | 2000 | 18 | 62 | 32µs, 4% | 65 | Input | PL95A1 |
IGN1012S2000 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of TACAN, DME and IFF/SSR avionics systems. Under 32µs, 4% duty cycle pulse conditions, it supplies 2000 W of peak output power, with typically 18dB of associated gain and 62% efficiency. It operates from a 65V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.
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