IGN1012S40

High Power L-Band Avionics Transistor Offers 40W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
1.025
1.15
40
23
70
32µs, 2%
50
Input
PL32A2
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IGN1012S40 is a high power GaN transistor best suited for L-band avionic applications. Specified for use under Class AB operation, this transistor offers 1.025-1.150 GHz of operating frequency, minimum of 40W of peak pulse power, 50V and 2% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.

FEATURES

GaN on SiC HEMT Technology

40W Output Power

Class AB Operation

Pre-matched Internal Impedance

100% High Power RF Tested

Negative Gate Voltage/Bias Sequencing

APPLICATION

L-Band Avionics

EXPORT STATUS

EAR99