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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.03
1.03
1000
18
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
80
48x (32µs On, 18µs Off), 6.4%
50
Input

IGN1030L1000

Model
Min Frequency (GHz)
Max Frequency (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IGN1030L1000
1.03
1.03
1000
18
80
48x (32µs On, 18µs Off), 6.4%
50
Input
PL84A1

IGN1030L1000 is a high power GaN RF transistor best suited for L-band avionic applications. Specified for use under Class AB operation, this transistor offers 1.03 GHz of operating frequency, minimum of 1000W of peak pulse power, 50V and 6.4% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.

FEATURES

GaN on SiC HEMT Technology

1000W Output Power

Class AB Operation

Pre-matched Internal Impedance

100% High Power RF Tested

Negative Gate Voltage/Bias Sequencing

APPLICATION

L-Band Avionics

EXPORT STATUS

EAR99

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