IGN1030L800 and IGN1030L800S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of IFF/SSR avionics systems. They operate at 1030 MHz. Under Mode S ELM (48x (32µs on, 18µs off), 6.4% Long Term Duty Cycle] pulse conditions, they supply a minimum of 800W of peak output power, with typically 17 dB of associated gain and 65% efficiency. They operate from a 50 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.