IGN1030L800
High Power GaN RF Transistor for Avionics Operating at 1.03 GHz
Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|
1.03 | 1.03 | 800 | 17 | 65 | 48x (32µs On, 18µs Off), 6.4% | 50 | Input | PL84A1 |
IGN1030L800 is a high power GaN RF transistor best suited for L-band avionic applications. Specified for use under Class AB operation, this transistor offers 1.03 GHz of operating frequency, minimum of 800W of peak pulse power, 50V and 6.4% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
FEATURES
GaN on SiC HEMT Technology
800W Output Power
Class AB Operation
Pre-matched Internal Impedance
100% High Power RF Tested
Negative Gate Voltage/Bias Sequencing
APPLICATION
L-Band Avionics
EXPORT STATUS
EAR99
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