IGN1030M800

High Power GaN RF Transistor for Avionics Operating at 1.03 GHz

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
1.03
1.03
800
17
65
128µs, 2%
50
Input
PL84A1
ign0160um12.jpeg

IGN1030M800 is a high power GaN RF transistor best suited for L-band avionic applications. Specified for use under Class AB operation, this transistor offers 1.03 GHz of operating frequency, 128us and 2% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.

FEATURES

GaN on SiC HEMT Technology

800W Output Power

Class AB Operation

Pre-matched Internal Impedance

Negative Gate Voltage/Bias Sequencing

Includes Depletion Mode

APPLICATION

L-Band Avionics

EXPORT STATUS

EAR99

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