IGN1030S1400

L-Band, GaN/SiC, RF Power Transistor

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
1.03
1.03
1400
20
68
32μs, 4%
50
Input
PL84A1
ign0160um12.jpeg

IGN1030S1400 and IGN1030S1400S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of IFF/SSR avionics systems. They supply a minimum of 1400 W of peak output power, with typically >20 dB associated gain and 68% efficiency. They operate from a 50 V supply voltage. The transistors are packaged in a high thermal conductivity package for optimized thermal performance.

FEATURES

GaN on SiC HEMT Technology

Output Power >1400 W

Pre-matched Input Impedance

High Efficiency - up to 72%

100% RF Tested Under 32 ms, 4% duty cycle pulsed

RoHS and REACH Compliant

APPLICATION

L-band Avionics IFF & SSR Systems and Suitable for uplink and downlink

EXPORT STATUS

EAR99

Download CAD File