IGN1030S1400 and IGN1030S1400S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of IFF/SSR avionics systems. They supply a minimum of 1400 W of peak output power, with typically >20 dB associated gain and 68% efficiency. They operate from a 50 V supply voltage. The transistors are packaged in a high thermal conductivity package for optimized thermal performance.