IGN1090M800 and IGN1090M800S are high power GaN-onSiC RF power transistors that have been designed to suit the unique needs of IFF/SSR avionics systems. They operate at 1090 MHz. Under 128µs, 2% duty-cycle pulse conditions, they supply a minimum of 800 W of peak output power, with typically 17 dB of associated gain and 65% efficiency. They operate from a 50 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.