IGN1214L500B

L-Band, GaN/SiC, RF Power Transistor

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
1.2
1.4
500
15
70
2ms, 20%
50
Input & Output
PL95A1
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IGN1214L500B is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of modern long-pulse, long-range radar systems. It supplies a minimum of 500 W of peak output power, with typically >15 dB of gain and 70% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxysealed ceramic lid.

FEATURES

GaN on SiC HEMT Technology

Output Power >500 W

Class AB Operation

Pre-matched Input and Output Impedance

High Efficiency - up to 75%

100% RF Tested Under 2ms, 20% duty cycle pulse conditions

APPLICATION

L-Band Radar

EXPORT STATUS

EAR99