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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.2
1.4
250
16
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
65
300µs, 10%
50
Input & Output

IGN1214M250

Model
Min Frequency (GHz)
Max Frequency (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IGN1214M250
1.2
1.4
250
16
65
300µs, 10%
50
Input & Output
PL44C1

IGN1214M250 is a high power GaN transistor best suited for L-band radar applications. Specified for use under Class AB operation, this transistor offers 1.2-1.4 GHz of operating frequency, minimum of 250W of peak pulse power, 50V and 10% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.

FEATURES

GaN on SiC HEMT Technology

250W Output Power

Class AB Operation

Pre-matched Internal Impedance

100% High Power RF Tested

Negative Gate Voltage/Bias Sequencing

APPLICATION

L-Band Radar

EXPORT STATUS

EAR99

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