IGN1214M250 is a high power GaN transistor best suited for L-band radar applications. Specified for use under Class AB operation, this transistor offers 1.2-1.4 GHz of operating frequency, minimum of 250W of peak pulse power, 50V and 10% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.