IGN1214M300

L-Band, GaN/SiC, RF Power Transistor

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
1.2
1.4
300
17
72
300µs, 10%
50
Input & Output
PL44C1
ign0160um12.jpeg

IGN1214M300 and IGN1214M300S are high power GaN-on-SiC RF power transistors that have been designed specifically for use in L- band radar systems. They operate over the full bandwidth of 1.20 - 1.40 GHz. They supply a minimum of 300W of peak output power, with typically >17 dB of gain and 70% efficiency. They operate from a 50V supply voltage.

FEATURES

GaN on SiC HEMT Technology

Output Power >300 W

Pre-matched Input & Output Impedance

High Efficiency - >70%

Very high thermal conductivity flange

IGN1214M300 has a bolt-down flange, IGN1214M300S is the earless flange option

APPLICATION

L-Band Radar Systems

EXPORT STATUS

EAR99