IGN1214M300
L-Band, GaN/SiC, RF Power Transistor
Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|
1.2 | 1.4 | 300 | 17 | 72 | 300µs, 10% | 50 | Input & Output | PL44C1 |
IGN1214M300 and IGN1214M300S are high power GaN-on-SiC RF power transistors that have been designed specifically for use in L- band radar systems. They operate over the full bandwidth of 1.20 - 1.40 GHz. They supply a minimum of 300W of peak output power, with typically >17 dB of gain and 70% efficiency. They operate from a 50V supply voltage.
