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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.2
1.4
300
17.5
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
70
300µs, 10%
50
Input & Output
IGN1214M300R3
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN1214M300R3 | 1.2 | 1.4 | 300 | 17.5 | 70 | 300µs, 10% | 50 | Input & Output | PL44C1 |
IGN1214M300R3 and IGN1214M300R3S are high power GaN-on-SiC RF power transistors that have been designed specifically for use in L band radar systems. They operate over the full bandwidth of 1.2 - 1.4 GHz. They supply a minimum of 300W of peak output power, with typically >17.5 dB of associated gain and 70% typical efficiency. They operate from a 50V supply voltage.
FEATURES
GaN on SiC HEMT Technology
Output Power >350 W
Pre-matched Input & Output Impedance
High Efficiency - up to 72%
Capable of withstanding 5:1 VSWR mismatch
100% RF Tested
RoHS and REACH Compliant
IGN1214M300R3 has a bolt-down flange, IGN1214M300R3S is the earless flange option
APPLICATION
L-band Radar Systems
EXPORT STATUS
EAR99
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