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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.2
1.4
380
20
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
54
150µs, 10%
50
Input

IGN1214M380

Model
Min Frequency (GHz)
Max Frequency (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IGN1214M380
1.2
1.4
380
20
54
150µs, 10%
50
Input
PL44C1

IGN1214M380 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of modern radar systems. It supplies a minimum of 380 W of peak output power, with typically >19.5 dB of associated gain and 50% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES

GaN on SiC HEMT Technology

Output Power >380 W

Class AB Operation

Pre-matched Internal Impedance

100% RF Tested Under 150µs, 10% duty cycle pulse conditions

RoHS and REACH Compliant

APPLICATION

L-band Radar Systems

EXPORT STATUS

EAR99

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