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IGN1214M600
L-Band Radar Transistor Offering 600W
Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|
1.2 | 1.4 | 600 | 19.6 | 70 | 150µs, 10% | 50 | Input | PL64A1 |
IGN1214M600 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of modern long-pulse, long-range radar systems. It supplies a minimum of 600 W of peak output power, with typically >19 dB of gain and 70% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxysealed ceramic lid.
FEATURES
GaN on SiC HEMT Technology
Output Power >600 W
Pre-matched Input Impedance
High Efficiency - typically 70%
100% RF Tested Under 150µs, 10% duty cycle pulse conditions
RoHS and REACH Compliant
APPLICATION
L-Band Radar
EXPORT STATUS
EAR99
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