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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.2
1.4
600
19.6
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
70
150µs, 10%
50
Input
IGN1214M600
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN1214M600 | 1.2 | 1.4 | 600 | 19.6 | 70 | 150µs, 10% | 50 | Input | PL64A1 |
IGN1214M600 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of modern long-pulse, long-range radar systems. It supplies a minimum of 600 W of peak output power, with typically >19 dB of gain and 70% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxysealed ceramic lid.
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