IGN1214M600

L-Band Radar Transistor Offering 600W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
1.2
1.4
600
19.6
70
150µs, 10%
50
Input
PL64A1
ign0160um12.jpeg

IGN1214M600 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of modern long-pulse, long-range radar systems. It supplies a minimum of 600 W of peak output power, with typically >19 dB of gain and 70% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxysealed ceramic lid.

FEATURES

GaN on SiC HEMT Technology

Output Power >600 W

Pre-matched Input Impedance

High Efficiency - typically 70%

100% RF Tested Under 150µs, 10% duty cycle pulse conditions

RoHS and REACH Compliant

APPLICATION

L-Band Radar

EXPORT STATUS

EAR99